JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 69th JSAP Spring Meeting 2022
Session ID : 24a-E302-10
Conference information

Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing
*Hidetoshi MizobataYuhei WadaMikito NozakiTakuma KobayashiTakuji HosoiTetsu KachiTakayoshi ShimuraHeiji Watanabe
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Article 1st page
Content from these authors
© 2022 The Japan Society of Applied Physics
Previous article Next article
feedback
Top