Interconnect technologies and materials for logic at 2 nm and beyond

抄録

The introduction of several breakthrough technologies has allowed Cu interconnects to have been used for more than 20 years. While R&D to further extend Cu damascene interconnects to the 2 nm node and beyond continues, alternative interconnect metals such as Ru are being investigated to replace Cu in anticipation of the approaching limit of Cu interconnect technology. This paper outlines the major advances that Cu interconnect technology has made over the past 20 years, and introduces some of the key technologies that are being considered for use in the coming 2 nm generation. Finally, the alternative metal interconnect technologies that are expected to follow the limitations of Cu interconnects will be outlined.