Introduction of visible-light-transparent novel devices using widegap nickel oxide (NiO) thin film

抄録

Nickel oxide (NiO) is a wide-bandgap oxide semiconductor and functional material that offers advantages including p-type conductivity, a high absorption coefficient, and a relatively small ionization potential. It is, therefore, a promising material for use in novel applications such as “invisible” solar cells, sensors, transistors, and hole-injection layers. This study examined the fundamental properties of NiO thin films deposited using conventional RF magnetron sputtering. In addition, several devices transparent to visible light using NiO, including solar cells, Internet of Things monolithic gas sensors, and self-powered devices, have been introduced, and the robustness of such devices, including radiation resistance, was investigated.