Advancements in nitride-semiconductor crystal growth using molecular beam epitaxy

抄録

Molecular beam epitaxy (MBE) has long been studied and developed as a nitride-semiconductor crystal growth method along with metal–organic vapor deposition and hydride vapor deposition. This study introduces the authors’ recent achievements in nitride-semiconductor crystal growth by MBE, which is characterized by low-temperature growth and nitrogen-plasma irradiation. Direct growth of gallium nitride on a ScAlMgO₄ substrate, threading-dislocation-density reduction in indium nitride (InN) grown with in situ surface modification by nitrogen-plasma irradiation, and InN remote epitaxy using graphene are described.