Two-dimensional material transistors: Expectations observed in the IRDS road map and latest research progresses

Abstract

Two-dimentional (2D) semiconductor materials are now intensively examined with the aim of the application to advanced CMOS logic transistors for 1-nm node and beyond. The expectation for 2D materials toward ultimate scaling of CMOS can be observed in the IRDS road map. Here, the reasons for high expectations from 2D materials and the latest progress on the research of 2D material transistors with transition metal dichalcogenides, such as MoS₂ and WSe₂, are reviewed. Furthermore, challenges and prospects of 2D material transistor technologies for real CMOS application are discussed.