Diamond field-effect transistors

抄録

Diamond exhibits unique properties enabling the fabrication of high-performance p-channel field-effect transistors, an achievement that remains challenging for other wide-bandgap semiconductors. This distinct potential positions diamond as an exceptional semiconductor material for realizing complementary power inverter circuits and other advancements in power electronics. This paper provides a comprehensive review of the progress on diamond field-effect transistors, with particular emphasis on the diamond/gate insulator interface and its critical influence on device performance.