Development of monochromatic electron beam planar electron source using atomic layer material stacking structure

抄録

With the recent miniaturization of advanced semiconductor devices, there is a growing demand for high-resolution, high-throughput electron beam devices in the semiconductor manufacturing process. Planar electron sources can be fabricated using semiconductor microfabrication technology, facilitating the fabrication of multi-beam arrays; however, challenges persist involving energy monochromaticity and emission current density. This study develops a planar electron source with high emission current density and energy monochromaticity, superior to that of conventional electron sources, by addressing these challenges using the excellent electron transmission characteristics of atomic layer materials.