Crystal growth of CuInSe2 single crystals by synthesis solute diffusion method with controlling the growth rate

Kenji SAKAMOTO; Takahiko OKUMURA; Hiroaki MATSUSHITA; Akinori KATSUI

doi:10.2978/jsas.11.40

成長速度制御SSD法によるCuInSe₂単結晶の育成

Kenji SAKAMOTO, Takahiko OKUMURA, Hiroaki MATSUSHITA, Akinori KATSUI

著者情報

ジャーナルフリー

1999 年 11 巻 1 号 p. 40-41

DOI https://doi.org/10.2978/jsas.11.40

詳細

抄録

CuInSe₂ single crystals have been grown by synthesis solute diffusion method with controlling the growth rate. Effects of the Cu/In in solvents and the temperature of Se source on the purity of grown crystals have been studied. The single crystal with lower carrier density of -10¹⁷cm^-3 was found to be grown from a stoichiometric solvent (Cu/In -1.0) when the temperature of Se source was 743K.

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