Journal of Advanced Science
Online ISSN : 1881-3917
Print ISSN : 0915-5651
ISSN-L : 0915-5651
Cu2-IV-VI3, Cu3-Sb-VI4, Cu2-Zn-IV-Se4系化合物半導体の結晶作製と評価
Hiroshi YASUDAEisaku SEKIYATakashi MAEDAHiroaki MATSUSHITAAkinori KATSUI
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1999 年 11 巻 1 号 p. 42-43

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抄録
Among Cu-based compound semiconductors of Cu3-Sb-VI4 (VI=S, Se), Cu2-IV-S3 (IV=Ge, Sn) and Cu2-Zn-IV-Se4 (IV=Ge, Sn), single phases of Cu3SbSe4, Cu2SnS3, Cu2ZnGeSe4 and Cu2ZnSnSe4 were synthesized from respective melts, and single crystals of those four compounds were grown. Optical band gaps of Cu2ZnGeSe4 and Cu2ZnSnSe4 were determined by optical absorption measurements to be 1.64 and 1.40eV, respectively. From the temperature dependence of electrical resistivities, thermal band gap of Cu3SbSe4 was estimated to be 0.22eV.
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