Cu₂-IV-VI₃, Cu₃-Sb-VI₄, Cu₂-Zn-IV-Se₄系化合物半導体の結晶作製と評価

抄録

Among Cu-based compound semiconductors of Cu₃-Sb-VI₄ (VI=S, Se), Cu₂-IV-S₃ (IV=Ge, Sn) and Cu₂-Zn-IV-Se₄ (IV=Ge, Sn), single phases of Cu₃SbSe₄, Cu₂SnS₃, Cu₂ZnGeSe₄ and Cu₂ZnSnSe₄ were synthesized from respective melts, and single crystals of those four compounds were grown. Optical band gaps of Cu₂ZnGeSe₄ and Cu₂ZnSnSe₄ were determined by optical absorption measurements to be 1.64 and 1.40eV, respectively. From the temperature dependence of electrical resistivities, thermal band gap of Cu₃SbSe₄ was estimated to be 0.22eV.