抄録
For ultralarge-scale integrated (ULSI) circuit processes, two types of large-diameter plasma generation methods were studied. The one is a microwave plasma by employing a high-permittivity material window. The plasma was produced by the surface-wave and thus the density enhancement was observed with the high permittivity of the dielectric window material. The method was emphasized to be promising in producing a large-diameter plasma for ULSI processes, in particular for photo-resist asking. Another source is an RF plasma by employing a multimode antenna. A newly designed antenna with several loops and different modes enabled a large-diameter plasma production having a function of electron energy control. The electron energy was reduced by changing the azimuthal mode of antenna from m=0 to m=2 with no notable change in electron density. Thus it was concluded that the characteristic length for induction field reverse was essential in conjunction with electron free path.
