Oxidation behavior of the SiB₄ sintered body

Abstract

SiB₄ has excellent chemical property as well as low thermal conductivity and high electric conductivity at high temperature, so it is promising as a thermoelectric material. SiB₄ was made by hot-pressing. The oxidation behavior of SiB₄ sintered body was studied in air for 5min to 25h ranging at 773 to 1373K by mass gain and XRD. The SiB₄ was slightly oxidized up to 1173K. However, mass gain of the SiB₄ increased markedly at 1273K.