抄録
The demand for the transparent conductors or semi-conductors in the visible region, which have good transparency and electric conductivity, is increasing with the development of electro-optical devices. Recently, ITO films with main element of In2O3 doped with low concentration of SnO2 have been prepared. However, there are few reports about the single crystal of In2O3- SnO2 (ITO). The aim of this study is to know the defect structure minutely, which is typical in these oxide materials. ITO single crystals were prepared by the flux method. The structure was characterized by X-ray diffraction analysis, and free carriers were evaluated through the dispersion analysis of far-infrared reflection spectra.
