Pressure Effect on Yb4As3 and Its Related Compounds

H. Aoki; A. Ochiai; Y. Seino; H. Kobayashi; T. Kamimura; T. Suzuki; H. Takahashi; N. Takeshita; N. Môri

doi:10.4131/jshpreview.7.605

Pressure Effect on Yb₄As₃ and Its Related Compounds

H. Aoki, A. Ochiai, Y. Seino, H. Kobayashi, T. Kamimura, T. Suzuki, H. Takahashi, N. Takeshita, N. Môri

著者情報

キーワード: pressure effect, Yb₄As₃, Yb₄ (As_1-xSb_x) ₃, Yb₄ (As_1-xP_x) ₃

ジャーナルフリー

1998 年 7 巻 p. 605-607

DOI https://doi.org/10.4131/jshpreview.7.605

詳細

抄録

Transport properties of P-and Sb-doped Yb₄As₃ weremeasured. The electrical resistivity measurement of Yb₄ (As_{0. 88}Sb_{0. 12}) ₃ under various pressure up to 8 GPa was performed These results were compared with that of pure Yb₄As₃ under high pressure. The substitution effect of Sb is very similar to the pressure effect, however, there is a big differencebetween them. This similarity strongly suggests that the mobility of the electron is much smaller compared to that of the hole.

責任著者(Corresponding author)

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