抄録
Growth characteristics of single crystal cubic boron nitride (cBN) grown on a (111) surface of diamond seed crystal was studied. A temperature gradient method was employed by using lithium boron nitride as a solvent under 5. 5 GPa and 1500°C for 10 min to 100 hr. The island nucleation of (111) crystals was taken place even at 10 min. The island crystals were, then, coalesced and the (113) faces were dominantly appeared, followed by (113) faceted growth. Considering the growth rate of the crystal under constant P-T growing condition, the growth of the crystal in this system seemed to be controlled by the interface reaction on the crystal but not by the diffusion of the BN source in the reaction bath.
