B-9 GIXRD CHARACTERIZATION OF ION BEAM SYNTHESIZED 3C-SiC(Session: Thin films)

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In this study, a silicon carbide layer was synthesized by 40 keV 12^C^+ implantation of a ptype (100) Si wafer to a dose of 6.5×10^<17> cm^<-2> at 400℃. The implanted sample was subsequently annealed at 1000℃ in a vacuum furnace. As a non-destructive technique, glancing incidence X-ray diffraction analysis (GIXRD) was used to probe the crystallinity of the synthesized layer. The results indicated that 3C-SiC was formed during implantation and the subsequent annealing had greatly enhanced its crystalline quality.