OS06W0033 Measurement of the fracture toughness of micrometer scale single crystal silicon by tensile test method

抄録

We developed a method for measuring the fracture toughness of single crystal silicon thin film. We prepared single-edge-notched specimen of 5μm thickness on (110) wafer, with tensile irection in <110> orientation. Our on-chip test device eliminates the troublesome of gripping fragile specimen. The measured average fracture toughness was 1.65 MPa・m^<1/2>, with scatter. It is somewhat higher than, but comparable to the value of bulk silicon. The scanning electron microscope (SEM) observation shows that the fracture preferred occur on the (111) cleavage plane.