抄録
A computational fluid dynamics (CFD) model considering plasma and radiation was proposed to simulate three-dimensional (3D) ICP equipment consisting of multi-turn spiral coil antenna, coupling an rf (13.56MHz) field through a quartz window into plasma chamber. Since the gas temperature in the chamber can become a few times higher than room temperature for a largescale wafer processing and it has significant effect on the gas density, considering gas temperature is more important at a low gas pressure.
