Siemens Simcenterソリューションによるマルチフィジクス解析機能を用いた半導体製造工程の課題検討

(Simcenter STAR-CCM+によるSiC-CVD結晶成長熱流体解析の適用検討)

抄録

Thermal CVD is a promising process for epitaxial growth of silicon carbide (SiC), which is widely used in various types of electric devices these days. For improving CVD processes, CFD have a key role because to understand the kinetics, flow and heat is significantly important. In the previous report, we examined the applicability of Simcenter STAR-CCM+ for a 2D SiC-CVD reactor model and performed a simplified design exploration with Simcenter HEEDS and Simcenter ROM. In this paper, we expand the CFD model to a full 3D geometry and compare the difference between 2D and 3D results. Furthermore, a simplified numerical experiment is conducted to evaluate the effect of wafer rotation by applying velocity on the surface.