非平衡プラズマ－湿式リアクタ複合処理による 半導体製造産業排ガス中の NO_x除去

抄録

Non-equilibrium plasma combined with a wet reduction by chemical scrubber is perfumed as a removal method of NO_x which is a by-product of exhaust gas of perfluorinated compounds (PFCs) by semiconductor manufacturing industries. In the non-equilibrium plasma process, NO oxidation is performed by direct/indirect dielectric barrier discharge (DBD) plasma used blade-barrier electrode. In wet reduction process, NO₂ reduction is performed by Na2S as a reduction agent. In the present study, NO_x reduction is investigated at 300 ppm of pure NO gas with different gas flow rate and discharged energy. In the indirect oxidation method at 3 L/min and discharge power of 6.3 W, 83.7 % NO_x removal efficiency is achieved. From the results, it is confirmed that the combined process of non-equilibrium plasma process and a wet reduction reaction is expected for NO_x reduction for semiconductor manufacturing industry.