抄録
Non-equilibrium plasma combined with a wet reduction by chemical scrubber is perfumed as a removal method of NOx which is a by-product of exhaust gas of perfluorinated compounds (PFCs) by semiconductor manufacturing industries. In the non-equilibrium plasma process, NO oxidation is performed by direct/indirect dielectric barrier discharge (DBD) plasma used blade-barrier electrode. In wet reduction process, NO2 reduction is performed by Na2S as a reduction agent. In the present study, NOx reduction is investigated at 300 ppm of pure NO gas with different gas flow rate and discharged energy. In the indirect oxidation method at 3 L/min and discharge power of 6.3 W, 83.7 % NOx removal efficiency is achieved. From the results, it is confirmed that the combined process of non-equilibrium plasma process and a wet reduction reaction is expected for NOx reduction for semiconductor manufacturing industry.
