抄録
The electrical properties and phase transition behavior of (Pb,La)(Zr,Sn,Ti)O_3 (PLZST) thin films prepared on (100)Pt/(100)MgO substrates by RF-magnetron spattering and investigated by X-ray diffraction, relative dielectric constant and P-E hysteresis loops. From X-ray diffraction all PLZST thin films are polycrystalline. With an increase in composition Ti, electrically field-induced AFE-FE switching field(E_<AFE-FE>) is depressed. But Polarization of ferroelectric state are almost equal. These indicate PLZST components is better around boundary between AFE_T and F_R for micro actuator.
