抄録
We have developed small sized and low-loss MEMS switches for RF applications. Our MEMS switch is a cantilever type that is an integral structure with a signal line. The device size is 150μm by 60μm, which is one of the smallest in the reported MEMS switches. Our MEMS switch has a high resistance bias line between an electrode and a bias pad. The high resistance bias line gives the decrease in the insertion loss, because it prevents a signal from leaking to the bias pad. As a result, we achieved RF characteristics as 0.26dB insertion loss and 18.1dB isolation at 20GHz.
