The etch characteristics such as etch rates of sapphire and resist, etch selectivity over resist, and sidewalldeposition was studied in an inductively coupled plasma etcher using BCl_3/ CHF_3 plasmas in order to fabricate nano-patterned sapphire substrates(NPSS).In the etch conditions with bias power 100W and Antenna power 800W,the anisotropic sapphire etch profile could be observed by scanning electron microscope.The increase of chf_3 1n CHF_3/BC1_3 increased the thickness of the sidewall deposition.The etch mask used UV-curenanoimprint resist and an etch selectivity greater than 10 could be obtained at a lower working pressure (0.3Pa)in BCl_3/CHF_3 plasmas.
