抄録
Relation between porosity and mechanical properties of Al thin film sputtered on Si substrate is investigated by molecular dynamics simulations. MEAM potential is used in the Si-Al diatomic system. The growth of Al film on Si substrate is simulated. Deposited films include porosity on their surfaces and indicate amorphous configuration. The Si-Al system is loaded in the parallel or vertical direction against the substrate surface simulated results on the Al deposited Si system are compared with those on an artificial crystal film system. The difference in deformation behavior between deposited and crystal films is clarified in this paper.
