抄録
Growing process of a dislocation emitted from a Frank-Read source in silicon is simulated using the 3-D Discrete Dislocation (DD) method. In the proposed method, any dislocation line is divided into a set of segments and each segment is moved both by the elastic interaction and under the crystallographic local rule in the Cellular Automata method(CA). In the present study, geometric change of the dislocation line, the self and interaction energy and stress distribution of the field are obtained.
