抄録
We have developed piezoelectric RF-MEMS switch using PZT thin films for low-voltage actuation. PZT thin films with composition of Zr/Ti=53/47 were grown on the (111)Pt/Ti/Si substrates by rf-sputtering. Micro-cantilever switches, composed of PZT thin films and Cr elastic layers, were successively fabricated as unimorph actuators with a length of 500μm and width of 90μm. The tip deflection of the cantilevers was measured using a Laser Doppler Vibrometer and we observed piezoelectric vibration level as high as 0.62μm at a relatively small voltage of 5V. However, the micro-cantilevers had large initial bending because of residual stress in the PZT and Cr layers. We need to We established the fabrication process of RF-MEMS switch using PZT thin films on Si substrate.
