To examine the creep crack propagation behavior at the interface between a submicron-thick epoxy film and a silicon substrate, we conduct experiments and analysis using four cantilever specimens including epoxy film of different thickness. The interface crack propagation velocity increases with decreasing the thickness of epoxy film. The cause of this is the increase of stress intensity, which is due to the repression of expansion of the creep zone. The result of analysis shows the interface crack propagation velocity is related with the elastic singular stress field. These results signify the interface crack propagates under the small-scale creep condition.