Abstract
In the chemical mechanical polishing step in semiconductor manufacturing process is a problem that the detection of residual contaminant particles on the substrate surface. Light scattering method using a laser for detection of contaminating residual particles are used. However, since the separation of micro-roughness and residual contaminant particles has become difficult for the light scattering method, we have focused on a spectroscopic ellipsometer. Spectroscopic ellipsometer is capable of non-contact, non-destructive, high-speed measurement. Also, it is possible to measure the structure of a very thin surface layer of the sub-nm. In the present study attempts to detection of a substrate on the nanoparticles by ellipsometry, we examined the usefulness of this technique.
