抄録
Although there are some attempts to produce monocrystalline silicon carbide (SiC) flat surface, the surface properties such as surface roughness don't satisfy the specifications. This study tries to apply helicon sputtering device to Molecular beam epitaxy (MBE) process to improve these properties. This device was used as molecular beam source for generating of Si molecular beam, where the electric field caused by the helicon coil gave energy to the sputtered Si molecules. The amount of the energy was controlled by the electric power applied to the coil. And high purity acetylene gas was used for carbon (C) molecular beam source. Substrate was monocrystalline (111) Si wafer. According to the increase of the electric power, that is, high energy was given to molecules, the roughness of the surface was improved. Auniformly mirror surface of monocrystalline SiC was produced for the entire substrate and the roughness was 1nm (Ra) order.
