Deep Structure Fabrication of Silicon Utilizing High-Energy Ion Irradiation Followed by Wet Chemical Etching(M^4 processes and micro-manufacturing for science)

抄録

Etching characteristics of a silicon surface irradiated by high-energy ion beam against HF are investigated in this study. Specially designed ion irradiation facility, which enables to irradiate high-energy ion beam, is employed. A deep structure with a depth of several hundreds nanometers can be fabricated by utilizing high-energy ion irradiation. The depth of irradiated area can be controlled by adjusting acceleration voltage and ion charge, and it is related to distribution of damaged layer induced by ion irradiation. These results indicate a possibility of application as a novel deep three-dimensional nanofabrication process.