抄録
In this paper, a new nanofabrication process is proposed to fabricate nanostructures in silicon substrate. The process utilizes metal coating instead of using resist mask. The metal layer is patterned using nano plastic forming (NPF) followed by sputter etching, instead of ultraviolet lithography or electron beam lithography patterning. Then the pattern is transferred into the substrate by anisotropic chemical wet etching. Finally, the excess metal layer is removed to reveal nanostructure on the silicon substrate. The proposed process was experimentally studied and arrays of nano grooves narrower than 200 nm in width were fabricated in silicon (110) wafer.
