抄録
In this study, the controllability of multi-wire EDM slicing with the group power supplying method was investigated in order to apply this method regardless of workpiece resistance. In the case of monocrystalline silicon of 0.01Ω・cm, although peak current of electrical discharge pulse ideally changed with number of processing wire electrodes, kerf width, surface roughness and diameter of crater were approximately constant at almost constant cutting speed regardless of number of processing wire electrode. On the other hand, polycrystalline silicon of 2-3Ω・cm, resulted in ideal control of discharge current by applying sufficient no-load voltage, but its increasing ratio of no-load voltage must be larger than that of low resistance workpiece.
