抄録
This paper discusses a development of self-cleaning surface. Metal-assisted chemical etching (MACE) is one of the promising processes because it can produce high aspect-ratio structure on a silicon substrate which suits for hydrophobicity. Silica particles (e.g. φ1μm) were self-assembled on a substrate. After the reduction of particle size by argon ion bombardment, gold layer was deposited using the particles as a mask. As a result, gold layer that has openings with regular pitch was obtained. The substrate was then etched with mixture of hydrofluoric acid and hydrogen peroxide. The gold layer works as a catalyst and this part is selectively etched. The oxide layer of silicon is originally hydrophilic. But, it can be changed to hydrophobic by depositing hydrophobic material. Finally, self-cleaning function was examined.
