Investigation on the Abrasive Phenomenon of Colloidal SiO₂ Particles and Water-soluble C₆₀ Inclusion Complex Particles in the CMP Process of the 4H-SiC Substrate Wafer

抄録

This study used a water-soluble inclusion complex, fullerene/β-cyclodextrins(C₆₀/β-CDs), as additive abrasive with conventional SiO₂ slurry for the chemical mechanical polishing/planarization(CMP) of the silicon carbide substrate wafer. The hydrodynamic size(d_H) of C₆₀/β-CDs suspension was measured by the dynamic light scattering(DLS) method; the appearance of a C₆₀/β-CDs inclusion complex is observed by TEM. The C₆₀/β-CDs hybrid SiO₂-based slurry performed a higher removal rate than conventional SiO₂ slurry, and the polished surface showed a lower depression and roughness, too.