Abstract
Theoretical consideration of electro-static MEMS taking into account physics of semiconductor is first summarized. Electric field penetration into semiconductor material of which MEMS vibrator is made is modeled in electrostatic force of MEMS actuation as a function of impurity concentration. Furthermore, fluctuation of surface carrier trapping will be considered as a noise source. Based on the theory, integration of MEMS and active semiconductor devices such as MOS FET and pn diode is reviewed as a new class of MEMS devices.
