In the fine processing technology in recent years, the etching tolerance improvement of resists as a protective layer is requested with higher performance of the dry etching method. The curing methods with vacuum or UV have been proposed for controlling the reflow of the resist. Moreover, it is expected that the improvement of the etch selectivity Si/resist is improved by the curing method. In this study, we quantitatively evaluated the dry etch selectivity of the silicon with a protective layer made from the resist cured with vacuum and UV.
