抄録
Surface microstructured selective emitters for thermophotovoltaic (TPV) applications were fabricated on a Si wafer with electron beam lithography and wet etching process. It was predicted from the period of the surface structure that selective emission was observed around 2.0μm. Reflectance, transmittance spectra at room temperature and emittance spectra at elevated temperatures were measured. Selective emission due to the resonance effect between the microstructured surface and the electromagnetic field was clearly observed. Numerical calculations by rigorous coupled wave analysis (RCWA) were also carried out to estimate spectral properties of microstructured emitters. Numerial results at room temperature showed a good agreement with the experimental results.
