年次大会講演論文集
Online ISSN : 2433-1325
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827 薄膜の真性応力に起因するシリコン基板中の転位の動力学的解析
三宅 威生泉 聡志酒井 信介
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会議録・要旨集 フリー

p. 267-268

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抄録
In semiconductor devices, it is known that electrical failures are caused by the dislocation. But observation of dislocation motion in the micro-scale devices is very difficult. Therefore, it is useful for searching the source of dislocation if we can simulate the dislocation movement. In this paper, we have developed dislocation simulator and apply to the stress field caused by the intrinsic stress of the silicon-nitride thin film. We can reproduce the dependence of the dislocation generation on the temperature qualitatively.
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© 2002 一般社団法人日本機械学会
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