抄録
In semiconductor devices, it is known that electrical failures are caused by the dislocation. But observation of dislocation motion in the micro-scale devices is very difficult. Therefore, it is useful for searching the source of dislocation if we can simulate the dislocation movement. In this paper, we have developed dislocation simulator and apply to the stress field caused by the intrinsic stress of the silicon-nitride thin film. We can reproduce the dependence of the dislocation generation on the temperature qualitatively.
