SiN薄膜真性応力起因のシリコンの転位運動に対する実験と転位動力学シミュレーション(S05-5 ナノ・マイクロ構造体の信頼性,S05 薄膜の強度物性と信頼性)

抄録

In semiconductor devices, dislocations generated by high stress field provide electrical leakage. In this paper, we applied dislocation-dynamics simulator to SiN film stress field. Results are compared with the experimental results. Quantitative aspects of dislocation dynamics are discussed.