In this study, the novel dicing technology was proposed and applied to form the GaN laser diode resonator. The resonator facet is diced by a fine grain diamond wheel with slurry cutting fluid, which can form the cut surface to mirror by particle collision at the same time when cutting down the GaN laser diode from the wafer of GaN on sapphire substrate. We succeeded in reduced the tilt angle of GaN sidewall by the new cutting processing with supplying slurry superimposed ultrasonic vibration. The effect that the slurry attaches directly to the diamond blade without air film was expected.
