3447 ナノスケール押込みによる半導体量子ドットの発光応答とドット位置の同定(S15-3 機能材料,S15 先端材料システムの強度・機能評価とメゾメカニックス)

抄録

The location identification method of quantum dots (QDs) is described from view points of experiments which is nanoprobe elastic-indentation on photoluminescence (PL) of In_<0.5>Ga_<0.5>As/GaAs QDs and simulations. The large blue shifts in horizontal scan experiments, which were performed in a high vacuum, low temperature (10K) under an equal load, were non-linear for scan distance. The simulations are carried out based on finite element of axis symmetry and six-band strain Hamiltonian. We found the possibility that position of QDs could be decided by making the difference between scan experiment results and simulation results minimum. Consequently, most of QDs were observed the emission when these passed through near the edge of indenter, and it is found out that the luminescence was not observable under central part of indenter by comparison with a distribution of the valence band due to indentation.