In the heat treatment of silicon wafer, temperature control of the wafer surface is very important. This paper investigates the rapid radiative heating characteristics of the silicon wafers arranged in a row in the vertical heating furnace by the experiment and the numerical simulation. In present test, a wafer pitch was changed from 54 mm to 216 mm. The results showed that the maximum difference of surface temperature decreased with increase of a pitch of the silicon wafer. The maximum temperature difference was about 5℃, when a wafer pitch was 108mm and ramp-up ratio was 150℃/min. Simulation and experimental result agreed very well.
