MCH-12 Monolithically integration of GaN light-emitting diode and Si substrate with AlN/GaN superlattice as interlayer(Micro/Nanomechatronics IV,Technical Program of Oral Presentations)
InGaN/GaN p-i-n junction was deposited on GaN/Si template with AlN/GaN supperlattice as interlayer by molecular beam epitaxy. Different surface microstructure of the p-GaN was affected by the amount of Mg flux. Light-emitting diode was fabricated from the p-i-n junction. The crystal properties of InGaN/GaN p-i-n junction and the related light-emitting diode properties were investigated.
