抄録
Simultaneous measurement of the nanoprobe indentation force and the photoluminescence of InGaAs/GaAs quantum dots is successfully achieved by introducing a specially designed loadcell into the nanoprobe indentation system. By using this improved system, the emission properties of self-assembled InGaAs/GaAs quantum dots (QDs) under cylindrical nanoprobe indentation are investigated under low temperature and high vacuum conditions. Energy shifts as large as 100 meV induced by cylindrical nanoprobe indentation are observed in the QDs. Further, the increase in the emission energy of the QDs varies from peak to peak under the same indentation force. In order to clarify this mechanism, simulations are carried out based on a three-dimensional fmite element and six-band strain-dependent k*p Hamiltonian. The simulation results are in good agreement with the experimental ones. The results of the cylindrical nanoprobe indentation experiments show that the effect of nanoprobe shape on indentation-photoluminescence characteristics is significant.
