抄録
Static strength tests and dynamic fatigue tests were conducted on single crystalline silicon (SCS) thin films under N_2 gas environment at 22℃ and 180℃. It was statistically confirmed that SCS suffers accumulation of fatigue damage under inert environment of N_2 gas, as well as polycrystalline silicon. By comparing the results of SCS and polycrystalline silicon, it is expected that grain boundary is sensitive to temperature leading to a significant increase in static strength with increasing temperature. In fatigue tests, the accumulation of fatigue damage of silicon was accelerated by increasing temperature both in SCS and polycrystalline silicon. It was therefore speculated that fatigue damage is accumulated in crystal, although strengthening is attributable to grain boundary.
