抄録
Recent electronic device packaging, for instance, CSP has a bonded structure of IC chip and polymers, and delamination occurs frequently at the interface between IC and a resin. Furthermore, thermal stresses which are caused by a temperature variation in the bonding process of CSP and heat cycles for environment temperature will influence on the strength of interface. In the present paper, the strength of interface in multi-layered specimens composed of silicon, resin, silicon film and sapphire is investigated. Influence of layer thickness on the strength of interface is examined.
