M&M材料力学カンファレンス
Online ISSN : 2424-2845
セッションID: OS0421
会議情報
OS0421 マグネシウム系における転位移動障壁に対する温度効果の原子レベル解析
奥田 龍猪原 彰大君塚 肇尾方 成信
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会議録・要旨集 フリー

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In this study, the activation energy of dislocation motion in Mg at finite temperature is evaluated using the combination of nudged elastic band method and constraint molecular dynamics method. In tha case of edge dislocation, while the energy barrier at 0 K for prismatic slip is found to be twice larger than that for basal slip, their energy level is significantly small. On the other hand, energy barrier for screw dislocation glide on prismatic plane is quite large, and the obtained result suggests that the process of recombination and redissociation of partial dislocations is a key factor to understand the temperate dependence of activation energy for dislocation motion.
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