抄録
Characteristic of nanowire is gradually attracting many researchers with potential applications of nano-devices, nano-sensors, solar-cells and so on. This paper describes fabrication and evaluation of silicon nanowire array with the metal-assist chemical etching. To fabricate Si nanowire array, five steps are needed. First of all, Si wafer is cleaned and hydrophilization. Second, polystyrene spheres are coated on Si wafer by spin coater. Third, the arranged polystyrene sphere array is etched by reactive ion etching to reduce the diameter of the polystyrene spheres. Fourth, Au film is evaporated on the Si wafer of the arranged polystyrene to work as a catalyst. Fifth, the Si nanowire array is formed via wet etching by 4.6M HF and 0.44M H_2O_2 solution. After the wet etching, the Si nanowire array is dried by the supercritical drying method. After all, the highly ordered Si nanowire arrays are obtained with the diameter of 250-900 nm, the length of 0-12 μm and the density of 1.1×10^7-1.0×10^8 NWs/cm^2.
