分子動力学法による異材接合体の特異応力場解析

抄録

Recently, advanced semiconductor products have structures with thickness and width in nanoscale. As the size of the structures reduces to an nanometer level, a ratio of their surface to volume increases.In the present study, three-layered structure is analyzed using molecular dynamics (MD) method and the anisotropic elasticity theory. The analysis of stress and displacement near interface misfit dislocation in a two-phase anisotropic body is considering interface stress and interface elasticity. The stress and displacement distribution at the interface are compared the analysis considering the interface properties and the MD method.