Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 08, 2016 - October 10, 2016
Although single crystal silicon (Si) is a brittle material at room temperature, three-dimensional creep forming of Si can be performed at a high temperature. The objective of this research is to propose a new process technique of 3D MEMS tactile sensor based on a combination of creep deformation forming and impurity diffusion processes. Since creep deformation and impurity diffusion processes of Si depend on the process time, stress and temperature, this research will find a rational process condition. As the first step of this research, we have clarified creep parameters of Norton's rule for Si thin films by a backward analysis using the finite element method and punch creep test at high temperature, which are required for a design and process simulation of Si-based 3D MEMS tactile sensor.
