三次元有限要素法による異方性材料および等方性材料の接合構造に対する応力解析

（異方性材料のヤング率と特異応力場の強さの関係）

抄録

Electronic package is made by bonding of different material such as semiconductor chip, resin and metal. When the force act on the surface of bonded structure, the stress concentration occurs near the interface edge. The region of the stress concentration and the point of the interface edge are referred to as the singular stress field and the singular point, respectively. It appears that the singular stress field or the singular point is one of cause of fracture of the bonded structure and affects the electrical characteristics of the circuit. Therefore, it is necessary to investigate the suitable structure by the stress analysis. Silicon used as semiconductor chip is orthotropic material. In this study, the relationship between the material properties of the orthotropic material and intensity of singularity is investigated. The purpose of this study is to investigate on the singular stress field for three dimensional orthotropic-isotropic bonded structure. The stress analysis is carried out based on the finite element method.